Systems, devices and methods related to stacked band selection switch devices

ABSTRACT

Systems, devices and methods related to stacked band selection switch devices. In some embodiments, an RF module can include a packaging substrate and a power amplifier (PA) assembly implemented on a PA die mounted on the packaging substrate. The RF module can further include an output matching network (OMN) device mounted on the packaging substrate and a band selection switch device mounted on the OMN device. The OMN device can be configured to provide output matching functionality for at least a portion of the PA assembly.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.14/630,236, filed Feb. 24, 2015, entitled SYSTEMS, DEVICES AND METHODSRELATED TO IMPROVED RADIO-FREQUENCY MODULES, which claims priority toU.S. Provisional Patent Application No. 61/944,563, filed Feb. 25, 2014,entitled SYSTEMS, DEVICES AND METHODS RELATED TO IMPROVEDRADIO-FREQUENCY MODULES, the disclosures of both which are herebyexpressly incorporated by reference herein in their entirety.

BACKGROUND

1. Field

The present disclosure relates to radio-frequency (RF) modules.

2. Description of the Related Art

In radio-frequency (RF) applications, circuits and components forproviding functionalities such as transmission of amplified signalsand/or processing of received signals can be implemented as parts of apackaged module. Such a module can then be mounted on a circuit boardsuch as a phone board.

SUMMARY

In accordance with some implementations, the present disclosure relatesto a radio-frequency (RF) module that includes a packaging substrateconfigured to receive a plurality of components. The RF module furtherincludes a power amplifier (PA) assembly implemented on a first diemounted on the packaging substrate, and a controller circuit implementedon a second die mounted on the first die. The controller circuit isconfigured to provide at least some control of the PA assembly. The RFmodule further includes one or more output matching network (OMN)devices mounted on the packaging substrate and configured to provideoutput matching functionality for the PA assembly. The RF module furtherincludes a band selection switch device mounted on each OMN device.

In some embodiments, the first die can be a gallium arsenide (GaAs) die.The GaAs die can be configured for implementation of a plurality ofheterojunction bipolar transistor (HBT) PAs. The HBT PAs can include aplurality of PAs configured for 3G/4G operation. The PAs configured for3G/4G operation can include four or more PAs. The HBT PAs can furtherinclude a plurality of PAs configured for 2G operation.

In some embodiments, the second die can be a silicon (Si) die. Thecontroller circuit can include control functionality for either or bothof 3G/4G operation and 2G operation.

In some embodiments, the GaAs die and the Si die can be interconnectedby a plurality of wirebonds. In some embodiments, the Si die and thepackaging substrate can be interconnected by a plurality of wirebonds.In some embodiments, the GaAs die and the packaging substrate can beinterconnected by a plurality of wirebonds.

In some embodiments, the one or more OMN devices can include a first OMNdevice configured for 3G/4G operation. The first OMN device can be anintegrated passive device (IPD) implemented in a flip-chipconfiguration. The IPD flip-chip device can include a surface oppositefrom a mounting side, with the surface being configured to receive theband selection switch device. The band selection switch device isimplemented on a die such as a silicon-on-insulator (SOI) die. In someembodiments, the band selection switch die and the packaging substratecan be interconnected by a plurality of wirebonds.

In some embodiments, the RF module can further include a tuning circuitimplemented on the surface of the IPD flip-chip device. The tuningcircuit can be implemented as an IPD. The tuning circuit can include aharmonic tank circuit.

In some embodiments, the controller circuit on the second die and theband selection switch die can be interconnected by one or more flyingwirebonds.

In some embodiments, the packaging substrate can include a laminatepackaging substrate. The laminate packaging substrate can include afirst number of laminate layers, with the first number being less than asecond number of laminate layers associated with a module without theone or more OMN devices.

In some embodiments, the RF module can further include a plurality ofduplexers mounted on the packaging substrate. The RF module can furtherinclude a plurality of filter devices mounted on the packagingsubstrate. At least some of the filter devices can be configured tofacilitate RF shielding between a first region and a second region onthe packaging substrate.

In a number of teachings, the present disclosure relates to a method forfabricating a radio-frequency (RF) module. The method includes providingor forming a packaging substrate configured to receive a plurality ofcomponents. The method further includes mounting a power amplifier (PA)die on the packaging substrate, and stacking a controller circuit die onthe PA die. The method further includes mounting one or more outputmatching network (OMN) devices on the packaging substrate, and stackinga band selection switch on each OMN device.

In some implementations, the present disclosure relates to a wirelessdevice that includes a transceiver configured to generate aradio-frequency (RF) signal, and a front-end module (FEM) incommunication with the transceiver. The FEM includes a packagingsubstrate configured to receive a plurality of components, a poweramplifier (PA) assembly implemented on a first die mounted on thepackaging substrate, with the PA assembly being configured to amplifythe RF signal. The FEM further includes a controller circuit implementedon a second die mounted on the first die, with the controller circuitbeing configured to provide at least some control of the PA assembly.The FEM further includes one or more output matching network (OMN)devices mounted on the packaging substrate and configured to provideoutput matching functionality for the PA assembly, and a band selectionswitch device mounted on each OMN device. The wireless device furtherincludes an antenna in communication with the FEM and configured totransmit the amplified RF signal.

In some embodiments, the FEM can further include a plurality ofduplexers such that the FEM is a FEM-including-duplexer (FEMiD).

For purposes of summarizing the disclosure, certain aspects, advantagesand novel features of the inventions have been described herein. It isto be understood that not necessarily all such advantages may beachieved in accordance with any particular embodiment of the invention.Thus, the invention may be embodied or carried out in a manner thatachieves or optimizes one advantage or group of advantages as taughtherein without necessarily achieving other advantages as may be taughtor suggested herein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts a module having a number of components that canfacilitate transmission and/or reception of radio-frequency (RF)signals.

FIG. 2 shows an example power amplifier (PA) die having multiple PAsconfigured for 3G/4G operations implemented on, for example, asemiconductor substrate such as a gallium arsenide (GaAs) substrate.

FIG. 3 shows an example die having one or more controller circuitsimplemented on, for example, a silicon (Si) substrate.

FIG. 4 shows a configuration where a PA die mounted on a laminatepackaging substrate, and a Si controller die is mounted on the PA die.

FIGS. 5A and 5B show side and plan views of an example configurationwhere connections among the Si controller die, the PA die, and thelaminate substrate of FIG. 4 can be implemented as wirebonds.

FIG. 6 shows an example configuration of various circuits that can beimplemented in matching network devices.

FIG. 7 depicts an example path that an RF signal can travel throughduring an amplification process.

FIG. 8 shows that an output matching network (OMN) device can be mountedon the laminate substrate, and a corresponding band selection switch canbe stacked over the OMN device.

FIGS. 9A and 9B show side and plan views of an example configurationwhere connections among the band selection switch, the OMN device, andthe laminate substrate can be implemented as flip-chip connections andwirebonds.

FIGS. 10A and 10B show plan and side views of an example configurationwhere an OMN device can be positioned relatively close to the PA die.

FIGS. 11A and 11B show side and plan views of an example configurationwhere an additional device such as a tuning circuit can be stacked onthe OMN device.

FIG. 12 shows an example of reduction in the lateral dimensions of amodule that can result from space savings provided by stacking ofcomponents as described herein.

FIG. 13 shows an example laminate substrate having a number laminatelayers, with some or all of matching network circuits being implementedin one or more of such laminate layers.

FIG. 14 shows that an OMN device being implemented on a laminatesubstrate as described herein allows reduction of amount of lateralspace and/or number of layers associated with the laminate substrate.

FIG. 15 shows a configuration which is similar to the example layout ofthe module described in reference to FIG. 1, where RF shieldingfunctionality can be provided between different locations within themodule.

FIG. 16 depicts an example wireless device having one or moreadvantageous features described herein.

FIG. 17 shows a block diagram of an interconnect configuration that canbe implemented between a controller die as described herein and a PA diealso as described herein.

FIG. 18 shows a more specific example of the interconnect configurationthat can be implemented.

FIG. 19 shows examples of tri-level logic states that can be utilized tofacilitate operation of the interconnect example of FIG. 18.

FIG. 20 shows a PA control configuration where a reference current(Iref) can be shared among, for example, driver stages and output stagesso as to provide, for example, a reduction of I/O connections betweenthe PA die and the Si controller die, a reduction in the number and/orsize of associated filters, and a reduction in the sizes of the PAand/or controller die.

FIG. 21 shows an example PA control architecture that can be implementedto include and/or facilitate, for example, the shared Iref feature ofFIG. 20 and the tri-level logic feature of FIGS. 18 and 19.

FIG. 22 shows an example PA configuration that can include an inputswitch which can be implemented as a CMOS device incorporated into, forexample, the stacked Si controller die.

FIG. 23A shows an example PA configuration where a Y1 capacitance can beshared among a plurality of PAs.

FIG. 23B shows an example PA configuration where each of three examplePAs can have its own separate Y1 capacitance.

FIGS. 24A-24D show examples of harmonic tank circuits that can beimplemented in, for example, the tuning circuit of FIGS. 11A and 11B.

DETAILED DESCRIPTION OF SOME EMBODIMENTS

The headings provided herein, if any, are for convenience only and donot necessarily affect the scope or meaning of the claimed invention.

Designs for wireless devices continue to call for smaller form-factorsin various components, including power amplifier (PA) circuits and otherradio-frequency (RF) circuits, while maintaining high performancelevels. For example, PA-including-duplexer (PAiD) modules with smallerform-factors and high power added efficiency (PAE) specifications aredesirable. Such features can apply to, for example,average-power-tracking (APT) and envelope-tracking (ET) 3G/4G PAapplications.

FIG. 1 schematically depicts a module 100 having a number of componentsthat can facilitate transmission and/or reception of RF signals. Themodule 100 is shown to include a packaging substrate 102 configured toreceive a plurality of components. Such a packaging substrate caninclude, for example, a laminate substrate. Although various examplesare described in the context of such a laminate substrate, it will beunderstood that one or more features of the present disclosure can alsobe implemented utilizing other types of packaging substrates.

The module 100 is shown to include a PA die 160 such as a galliumarsenide (GaAs) die implemented in a heterojunction bipolar transistor(HBT) process technology. Although described in the context of HBT PAs,it will be understood that one or more features of the presentdisclosure can also be implemented in other types of PA die, includingother types of semiconductor materials and/or other transistor processtechnologies.

FIG. 1 shows that a controller circuit implemented on a silicon (Si) die162 can be mounted on the HBT PA die 160. Examples related to such aconfiguration, where a Si controller die 162 is mounted on an HBT PA die160, are described herein in greater detail.

The module 100 is shown to further include an output matching network(OMN) device 140, and OMN device 150. As described herein, a band switchcircuit can be implemented and stacked over some or all of such OMNdevices. More particularly, a switch circuit die 142 is shown to bestacked over the OMN device 140; and a switch circuit die 152 is shownto be stacked over the OMN device 150. Examples related to such aconfiguration, where a switch circuit die (142 or 152) is mounted on anOMN device (140 or 150), are described herein in greater detail.

In some embodiments, the OMN devices 140, 150 can be configured toprovide matching functionality for 3G/4G bands. Examples of such 3G/4Gbands are described herein in greater detail.

In some embodiments, the module 100 can further includes a matchingnetwork device 130 for 2G bands. A filter device such as a low-passfilter (LPF) 132 is shown to be stacked over the 2G matching networkdevice 130.

In FIG. 1, a plurality of filter devices and a plurality of duplexerdevices are also shown to be mounted on the packaging substrate 102. Forexample, band-pass filters for band B1 (106), band B3 (110), band B17(118) and band B25 (112) are shown to be mounted on the packagingsubstrate 102. In another example, duplexers for band B4 (104), band B8(116), band B20 (120) and band B26 (114) are shown to be mounted on thepackaging substrate 102. Although described in the example context ofsuch bands, it will be understood that one or more features of thepresent disclosure can also be applied to modules having more or lessbands, as well as modules having other combinations of bands.

In some embodiments, the HBT PA die 160 of FIG. 1 can include multiplePAs to facilitate 3G/4G operations. For example, four PAs can beimplemented instead of two PAs to achieve better performance overmultiple bands. In the multiple-PA configuration (e.g., four PAs), eachPA can be designed for a relatively narrow bandwidth. Accordingly, RFsignal conditioning circuits such as harmonic traps and inter-stagematching networks can be implemented in a more efficiently tuned manner.

FIG. 2 shows an example HBT PA die 160 having multiple PAs configuredfor 3G/4G operations implemented on, for example, a GaAs substrate 200.For example, a PA 202 can be configured for operation in B1 and B25bands; a PA 204 can be configured for operation in B3 and B4 bands; a PA206 can be configured for low band (LB) operation; and a PA 208 can beconfigured for very low band (VLB) operation. Although described in suchexample bands, it will be understood that the HBT PA die 160 can includemore or less number of 3G/4G PAs, and such PAs can be configured foroperations in other combinations of bands.

In the example of FIG. 2, one or more PAs for 2G operations can beimplemented on the GaAs substrate 200. For example, two 2G PAs (210,212) can be implemented; and such PAs can facilitate operations inlegacy 2G bands.

FIG. 3 shows an example die 162 having one or more controller circuitsimplemented on, for example, a silicon (Si) substrate 230. For example,a controller circuit 232 can be configured for 3G/4G operations; and acontroller circuit 234 can be configured for 2G operations. Althoughdescribed in the context of such two controller circuits, it will beunderstood that more or less number of controller circuits can beimplemented on the Si controller die 162.

As described in reference to FIG. 2, the example HBT PA die 160 caninclude six PAs, with four being configured for 3G/4G operations, andtwo being configured for 2G operations. As described in reference toFIG. 3, the example Si controller die 162 can include two controllercircuits for the six PAs of the HBT PA die 160, with one beingconfigured to control the four 3G/4G PAs, and the other being configuredto control the two 2G PAs.

FIG. 4 shows that in some embodiments, the HBT PA die 160 can be mountedon a packaging substrate such as a laminate substrate 102, and the Sicontroller die 162 can be stacked over the HBT PA die 160. FIGS. 5A and5B show side and plan views of an example configuration for theforegoing stack of HBT PA die 160 and the Si controller die 162, as wellas electrical connections that can be formed to facilitate variousoperations.

In the example of FIG. 4, the HBT PA die 160 is shown to be mounted onthe laminate packaging substrate 102. The Si controller die 162 is shownto be mounted on the HBT PA die 160. The HBT PA die 160 can beconfigured in a number of ways, including, for example, wirebondingconfiguration where electrical connections can include wirebonds.Although described in the context of such a wirebonding configuration,it will be understood that one or more features of the presentdisclosure can also be implemented in other die configurations for theHBT PA die 160.

The Si controller die 162 can be configured in a number of ways,including, for example, wirebonding configuration where electricalconnections can include wirebonds. Although described in the context ofsuch a wirebonding configuration, it will be understood that one or morefeatures of the present disclosure can also be implemented in other dieconfigurations for the Si controller die 162.

FIGS. 5A and 5B show side and plan views of an example configuration 240where connections among the Si controller die 162, the HBT PA die 160,and the laminate substrate 102 are implemented as wirebonds. Forexample, and as depicted in a simplified view of FIG. 5A, wirebonds 244can be formed between the Si controller die 162 and the HBT PA die 160to provide various electrical connections. Electrical connectionsbetween the HBT PA die 160 and the laminate substrate 102 can beprovided by wirebonds 242. Direct electrical connections between the Sicontroller die 162 and the laminate substrate 102 can be provided bywirebonds 246.

As shown in an example layout configuration of FIG. 5B, the foregoingwirebond connections can be formed between contact pads formed on the Sicontroller die 162, the HBT PA die 160, and the laminate substrate 102.In the example shown in FIG. 5B, wirebonds 242 between the HBT PA die160 and the laminate substrate 102 are depicted as solid lines; and suchwirebonds can be formed between contact pads 256 formed on the HBT PAdie 160 and contact pads 258 formed on the laminate substrate 102.Wirebonds 244 between the Si controller die 162 and the HBT PA die 160are depicted as dotted lines; and such wirebonds can be formed betweencontact pads 250 formed on the Si controller die 162 and the HBT PA die160. Wirebonds 246 between the Si controller die 162 and the laminatesubstrate 102 are depicted as dashed lines; and such wirebonds can beformed between contact pads 252 formed on the Si controller die 162 andcontact pads 260 formed on the laminate substrate 102.

As further shown in an example layout configuration of FIG. 5B, a groundpad 262 can be provided on the laminate substrate 102 so as to allowgrounding connections to be formed from the HBT PA die 160 and/or the Sicontroller die 162. Further, it will be understood that wirebond lengthsand contact pad arrangements can be configured to provide, for example,desired inductances in some electrical connections. For example, it maybe desirable to provide a plurality of wirebonds to a common contact padto yield desired inductance in the connection.

FIG. 6 shows an example configuration 270 of various circuits that canbe implemented in the matching network devices 130, 140, 150. The 2Gmatching network device 130 is shown to include two 2G output matchingnetwork (OMN) circuits 272, 274. Each of the two 3G/4G OMN devices 140,150 can include two OMN circuits, such that the two OMN devices 140, 150covers the example 3G/4G bands as described herein. For example, thefirst OMN device 140 can include OMN circuits 282, 284 configured toprovide matching functionalities for the B1/B25 and B3/B4 bands. Thesecond OMN device 150 can include OMN circuits 292, 294 configured toprovide matching functionalities for the low band (LB) and the very lowband (VLB).

In FIG. 6, the HBT PA die 160 is depicted as including the four PAcircuits 202, 204, 206, 208 corresponding to the foregoing 3G/4G bands,and the two PA circuits 210, 212 corresponding to the 2G bands. In someembodiments, the matching network devices 130, 140, 150 can bepositioned relatively close to the HBT PA die 160. The respective OMNcircuits and PAs can be configured such that the output arrays of therespective PA stages are closely spaced and aligned with the input portsof the OMN circuits. Such a configuration can allow RF signal paths tobe shorter, thereby reducing losses.

FIG. 7 schematically depicts an example path that an RF signal cantravel through during an amplification process. An input signal (RF_IN)is shown to be received by a PA 310 that can include, for example, adriver stage 302 and an output stage 304. In some embodiments, aninter-stage matching network can be provided between the two examplestages. The amplified RF signal from the output stage 304 is shown to beoutput as RF_OUT through an output matching network (OMN) 306 and a bandselection switch 308. As described in reference to FIG. 6, the OMNdevices can be configured and be positioned appropriately relative tothe PA die such that the outputs of the output-stages are relativelyclose to the inputs of the OMN circuits.

As shown in FIG. 7, it can be desirable to have the band selectionswitch 308 be relatively close to the OMN 306. As described herein, sucha band selection switch can be stacked over an OMN device to providesuch proximity, as well as to reduce the overall lateral area of amodule.

FIG. 8 shows that either or both of the OMN devices 140, 150 of FIGS. 1and 6 can be mounted on the packaging substrate such as a laminatesubstrate 102, and their respective band selection switches 142, 152 canbe stacked over the OMN devices 140, 150. FIGS. 9A and 9B show side andplan views of an example configuration for the foregoing stack of OMNdevice (140 or 150) and the band selection switch (142 or 152), as wellas electrical connections that can be formed to facilitate variousoperations.

In FIG. 8, the OMN device (140 or 150) is shown to be mounted on thelaminate packaging substrate 102. The band selection switch (142 or 152)is shown to be mounted on the OMN device. Either or both of the OMNdevices 140, 150 can be configured in a number of ways, including, forexample, flip-chip configuration where electrical connections aregenerally made through bump solders. Although described in the contextof such a flip-chip configuration, it will be understood that one ormore features of the present disclosure can also be implemented in otherconfigurations for the OMN devices 140, 150. The band selection switches142, 152 can be configured in a number of ways, including, for example,as a die with wirebonding configuration where electrical connections caninclude wirebonds. Although described in the context of such awirebonding configuration, it will be understood that one or morefeatures of the present disclosure can also be implemented in other dieconfigurations for the band selection switches 142, 152.

Examples of OMN circuits and devices that can be implemented as the OMNdevices (e.g., 140, 150) as described herein are described in U.S.Patent Application Publication No. 2014/0320205 entitledAUTOTRANSFORMER-BASED IMPEDANCE MATCHING CIRCUITS AND METHODS FORRADIO-FREQUENCY APPLICATIONS, which is expressly incorporated byreference in its entirely, and which is to be considered part of thespecification of the present application.

FIGS. 9A and 9B show side and plan views of an example configuration 320where connections among the band selection switch (142 or 152), the OMNdevice (140 or 150), and the laminate substrate 102 are implemented asflip-chip connections and wirebonds. For example, and as depicted in asimplified view of FIG. 9A, wirebonds 324 can be formed between the bandselection switch (142 or 152) and the laminate substrate 102 to providevarious electrical connections. Electrical connections and mechanicalmounting functionality between the OMN device (140 or 150) and thelaminate substrate 102 can be provided by bump solders 322.

As shown in an example layout configuration of FIG. 9B, the foregoingwirebond connections can be formed between contact pads formed on theband selection switch die (142 or 152) and the laminate substrate 102.In the example shown in FIG. 9B, wirebonds 324 between the bandselection switch die (142 or 152) and the laminate substrate 102 can beformed between contact pads 326 formed on the band selection switch dieand contact pads 328 formed on the laminate substrate 102.

In some embodiments, either or both of the OMN devices 140, 150 can beimplemented as an integrated passive device (IPD) packaged in aflip-chip configuration. When mounted to the laminate substrate 102 asshown in FIG. 9A, the upper surface of the OMN devices (140 or 150) canprovide a mounting surface for the corresponding band selection switchdie (142 or 152).

In some embodiments, the 2G matching network device 130 (e.g., in FIGS.1 and 6) can be implemented as a non-flip-chip IPD, and such an IPD canbe configured to provide the example matching functionalities asdescribed in reference to FIG. 6, and also include the example filteringfunctionality as described in reference to FIG. 1.

As described in reference to FIG. 6, the HBT PA die and an OMN deviceare preferably positioned relatively close to each other. FIGS. 10A and10B show plan and side views of an example configuration 330 where anOMN device (140 or 150) is shown to be positioned relatively close tothe HBT PA die 160. More particularly, electrical connections betweenthe band selection switch (142 or 152) stacked above the OMN device andthe controller die 162 stacked above the HBT PA die 160 can beimplemented by “flying” wirebonds 334. Such wirebonds are shown to beformed between contact pads 332 on the band selection switch (142 or152) and contact pads 336 on the controller die 162. Such wirebonds ineffect, can create another routing layer in space above the laminatesubstrate 102.

For the purpose of description, it will be understood that the PA die160 and the OMN device (140 or 150) of FIGS. 6 and 10 being relativeclose can include, for example, a configuration where the PA die 160 andthe OMN device are positioned adjacent to each other, a configurationwhere a single wirebond can provide an electrical interconnectionbetween a stack associated with the PA die 160 and a stack associatedwith the OMN device (140 or 150), or any combination thereof. In thecontext of a single wirebond interconnecting the two stacks, such awirebond can be, for example, the flying wirebond described in referenceto FIGS. 10A and 10B. It will be understood that such a single wirebondcan also include other configurations involving the two stacks. Forexample, such a single wirebond can provide interconnection between anylayer of the first stack and any layer of the second stack.

As described herein, the flip-chip configuration of the OMN devices 140,150 can provide a relatively large platform for stacking, for exampleone or more band switch die thereon. In some embodiments, there may besufficient space on such a flip-chip OMN device to stack another deviceaside from the band switch die.

FIGS. 11A and 11B show side and plan views of an example configuration340 where an additional device is stacked on an OMN device (140 or 150).A band switch die (142 or 152) is also shown to be stacked on the OMNdevice. In some embodiments, such an additional device can include, forexample, a tuning circuit. Such a tuning circuit can include, forexample, harmonic tanks, and be implemented as a duplexer-tuning IPD.Positioning such an IPD above the OMN device provides additional spacesaving on the laminate substrate 102.

FIG. 12 shows an example of reduction in the lateral dimensions of amodule that can result from space savings provided by stacking ofcomponents as described herein. A module 100 having one or more featuresas described herein is compared to a module 10 without such features.The module 10 is shown to have lateral dimensions of d1′×d2′; while themodule 100 is shown to have reduced dimensions of d1×d2. For example, amultimode, multiband (MMMB) PA module without the stacking features asdescribed herein can have lateral dimensions of approximately 5 mm×7 mm.A PA module implemented using one or more stacking features as describedherein (including the two extra 3G/4G paths for improved performance)can have lateral dimensions of approximately 4 mm×7 mm, which is anapproximately 20% reduction in lateral size.

FIGS. 13 and 14 show another advantageous feature that can result inmodules having one or more features as described herein. FIG. 13 showsan example configuration 20 without such features, and FIG. 14 shows anexample configuration 350 with such features. For particularly, FIG. 13shows a laminate substrate 12 having, for example six laminate layers.As is generally understood, some or all of matching network circuits canbe implemented in one or more of such laminate layers. Accordingly, anexample output matching network (OMN) 22 is depicted as being part ofthe laminate substrate 12.

In FIG. 14, an OMN device (140 or 150) can be implemented on a laminatesubstrate 102. Because such an OMN device can include some or all of thecomponents and/or functionalities associated with the in-substrateportion of the OMN 22 (FIG. 13), amount of lateral space and/or layersin the laminate layer can be reduced. For example, the laminatesubstrate 12 in the example of FIG. 13 includes six layers; while thelaminate substrate 102 in the example of FIG. 14 includes four layers.Such a significant reduction in the number of laminate layers canprovide a number of advantages, including, reduction in height of themodule and reduction in costs associated with the module (e.g., costassociated with the laminate substrate).

In some embodiments, a module having one or more features as describedherein can include RF shielding features. Such shielding features caninclude, for example, conformal shielding, shielding wirebonds,components that provide grounding connection(s) between an uppershielding layer and a ground plane, or some combination thereof.

FIG. 15 shows a configuration 370 which is similar to the example layoutof the module 100 described in reference to FIG. 1. In the exampleconfiguration 370, some or all of the filter devices (e.g., B1 filter106, B3 filter 110, B25 filter 112 and B17 filter 118) can be configuredto provide conduction paths between their upper portions and lowerportions, thereby facilitating shielding functionality. Additionaldetails concerning such shielding are described in U.S. PatentApplication Publication No. 2014/0308907 entitled APPARATUS AND METHODSRELATED TO GROUND PATHS IMPLEMENTED WITH SURFACE MOUNT DEVICES, which isexpressly incorporated by reference in its entirely, and which is to beconsidered part of the specification of the present application.

In the example of FIG. 15, compartmentalized shielding within the module100 can be provided. For example, third harmonic radiation fromoperation of B17 band (e.g., from an area 374 associated with the bandswitch 152) can interfere with operation of B4 Rx operation (e.g., in anarea 376 associated with the B4 duplexer 104). Such undesirableradiation from the area 374 to the area 376 is depicted as an arrow 372.Such radiation is shown to be shielded or reduced by the arrangement of,for example, the B1 filter 106 and the B3 filter 110.

In some implementations, a device and/or a circuit having one or morefeatures described herein can be included in an RF device such as awireless device. Such a device and/or a circuit can be implementeddirectly in the wireless device, in a modular form as described herein,or in some combination thereof. In some embodiments, such a wirelessdevice can include, for example, a cellular phone, a smart-phone, ahand-held wireless device with or without phone functionality, awireless tablet, etc.

FIG. 16 schematically depicts an example wireless device 400 having oneor more advantageous features described herein. In the context of amodule having one or more features as described herein, such a modulecan be generally depicted by a dashed box 100, and can be implemented asa front-end module (FEM) such as a FEM-including-duplexer (FEMiD).

PAs 310 can receive their respective RF signals from a transceiver 410that can be configured and operated to generate RF signals to beamplified and transmitted, and to process received signals. Thetransceiver 410 is shown to interact with a baseband sub-system 408 thatis configured to provide conversion between data and/or voice signalssuitable for a user and RF signals suitable for the transceiver 410. Thetransceiver 410 is also shown to be connected to a power managementcomponent 406 that is configured to manage power for the operation ofthe wireless device. Such power management can also control operationsof the baseband sub-system 408 and the module 300.

The baseband sub-system 408 is shown to be connected to a user interface402 to facilitate various input and output of voice and/or data providedto and received from the user. The baseband sub-system 408 can also beconnected to a memory 404 that is configured to store data and/orinstructions to facilitate the operation of the wireless device, and/orto provide storage of information for the user.

In the example wireless device 400, outputs of the PAs 310 are shown tobe matched (via respective match circuits 306) and routed to an antenna416 through a band selection switch 308, their respective duplexers 412and an antenna switch 414. In some embodiments, each duplexer 412 canallow transmit and receive operations to be performed simultaneouslyusing a common antenna (e.g., 416). In FIG. 16, received signals areshown to be routed to “Rx” paths (not shown) that can include, forexample, a low-noise amplifier (LNA).

A number of other wireless device configurations can utilize one or morefeatures described herein. For example, a wireless device does not needto be a multi-band device. In another example, a wireless device caninclude additional antennas such as diversity antenna, and additionalconnectivity features such as Wi-Fi, Bluetooth, and GPS.

FIGS. 17-24 show non-limiting examples of various circuits, devices,architectures, and/or methods that can be implemented to facilitate oneor more features of the present disclosure. Although described in thecontext of such features, it will be understood that such circuits,devices, architectures, and/or methods can also be implemented in othertypes of, for example, PA systems and packaging applications.

FIG. 17 shows a block diagram of an interconnect configuration 506 thatcan be implemented between a controller die 162 as described herein anda PA die 160 also as described herein. The controller die 162 caninclude an interface portion 502 configured to facilitateinterconnection with, for example, the PA die 160. The PA die 160 caninclude an interface portion 500 configured to facilitateinterconnection with, for example, the controller die 162.

In FIG. 17, the interconnection between the interfaces 502, 500 of thecontroller die 162, 160 is depicted as a line 504. As described hereinin a more specific example of FIG. 18, such an interconnection caninclude one or more wirebonds (e.g., one or more wirebonds 244 in FIGS.5A and 5B).

FIG. 18 shows an example of an interconnect configuration 506 that canbe implemented. Interface portions 502, 500 corresponding to thecontroller die and the PA die are indicated. In the example of FIG. 18,a wirebond 244 can provide functionalities associated with theinterconnection 504 of FIG. 17. The example configuration shown in FIG.18 can reduce the number of input/output connections between the stackedSi controller die (e.g., 162 in FIGS. 5A and 5B) and HBT PA die (e.g.,160 in FIGS. 5A and 5B). Accordingly, such a reduction in the number ofconnections can yield reduced die size(s) in either of both of thecontroller die and the PA die.

The example in FIG. 18 can be configured and operated to yield tri-levellogic states for controlling various operations of the PA circuit in thePA die. An example of such logic outputs are shown in FIG. 19. Forexample, a first level can include a V_input of approximately 0V; andwhen such a voltage level is provided to the interface 500, both ofoutputs OUT1 and OUT2 can have high logic states. A second level caninclude a V_input of approximately 1.65V; and when such a voltage levelis provided to the interface 500, OUT1 can be in a low logic state, andOUT2 can be in a high logic state. A third level can include a V_inputof approximately 3V; and when such a voltage level is provided to theinterface 500, both of OUT1 and OUT2 can have low logic states.

As described herein (e.g., in reference to FIG. 7), a PA can include twoor more amplification stages. For example, a driver stage can befollowed by an output stage. FIG. 20 shows a PA control configuration510 where a reference current (Iref) can be shared among, for example,the driver stages and the output stage. Such a configuration can providea number of desirable features, including a reduction of I/O connections(e.g., wirebonds) between the HBT PA die and the Si controller die, areduction in the number and/or size of associated filters, and sizes ofthe PA and/or controller die.

FIG. 21 shows an example PA control architecture 520 that can beimplemented to include and/or facilitate, for example, the shared Ireffeature of FIG. 20 and the tri-level logic feature of FIGS. 18 and 19.

FIG. 22 shows an example PA configuration 530 that includes an inputswitch 532. In FIG. 20, such an input switch is also indicated as 532.Such an input switch can be implemented as a CMOS device incorporatedinto, for example, the stacked Si controller die (e.g., 162 in FIGS. 4and 5). Such an input switch being part of the Si controller die can bedesirable, since implementing it in a separate die can consume morespace on the module.

FIG. 23A shows an example PA configuration 540 where a Y1 capacitance(e.g., a capacitor) 570 can be shared among a plurality of PAs. In theexample shown, three PAs 542, 552, 562 share the common Y1 capacitance570. Since the Y1 capacitance 570 is typically a large surface mounteddevice (e.g., typically 10,000 pF), sharing of such a capacitance cansave space in the module.

In some embodiments, tank circuits 544, 554, 564 can be provided andtuned to block the associated PA frequency band due to, for example,BiFET switch leakage. In some embodiments, switches 546, 556, 566 can beprovided and configured to inhibit or reduce loading in other bands.

FIG. 23B shows an example PA configuration 580 where each of threeexample PAs 582, 584, 586 can have its own separate Y1 capacitance(e.g., a capacitor) 592. As described in reference to FIG. 23A, suchseparate Y1 capacitors can occupy more space than the single common Y1capacitor.

FIGS. 24A-24D show examples of harmonic tank circuits that can beimplemented in, for example, the tuning circuit 342 of FIGS. 11A and11B. FIG. 24A shows an example harmonic tank circuit that can be tunedto, for example, second harmonic of band B8 or third harmonic of bandB26. Such a circuit can be implemented as a transformer-based IPD. FIG.24B shows an example harmonic tank circuit that can be tuned to, forexample, second harmonic of band B13 or third harmonic of band B17. Sucha circuit can be implemented as an IPD, and can be utilized along with aband switch (e.g., an SOI switch) stacked over an OMN device. FIG. 24Cshows an example harmonic tank circuit that can be tuned to, forexample, second harmonic of band B2. Such a circuit can be implementedas a transformer-based IPD. FIG. 24D shows an example harmonic tankcircuit that can be tuned to, for example, second harmonic of bandsB3/B4. Such a circuit can be implemented as a transformer-based IPD.

Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense, as opposed to anexclusive or exhaustive sense; that is to say, in the sense of“including, but not limited to.” The word “coupled”, as generally usedherein, refers to two or more elements that may be either directlyconnected, or connected by way of one or more intermediate elements.Additionally, the words “herein,” “above,” “below,” and words of similarimport, when used in this application, shall refer to this applicationas a whole and not to any particular portions of this application. Wherethe context permits, words in the above Description using the singularor plural number may also include the plural or singular numberrespectively. The word “or” in reference to a list of two or more items,that word covers all of the following interpretations of the word: anyof the items in the list, all of the items in the list, and anycombination of the items in the list.

The above detailed description of embodiments of the invention is notintended to be exhaustive or to limit the invention to the precise formdisclosed above. While specific embodiments of, and examples for, theinvention are described above for illustrative purposes, variousequivalent modifications are possible within the scope of the invention,as those skilled in the relevant art will recognize. For example, whileprocesses or blocks are presented in a given order, alternativeembodiments may perform routines having steps, or employ systems havingblocks, in a different order, and some processes or blocks may bedeleted, moved, added, subdivided, combined, and/or modified. Each ofthese processes or blocks may be implemented in a variety of differentways. Also, while processes or blocks are at times shown as beingperformed in series, these processes or blocks may instead be performedin parallel, or may be performed at different times.

The teachings of the invention provided herein can be applied to othersystems, not necessarily the system described above. The elements andacts of the various embodiments described above can be combined toprovide further embodiments.

While some embodiments of the inventions have been described, theseembodiments have been presented by way of example only, and are notintended to limit the scope of the disclosure. Indeed, the novel methodsand systems described herein may be embodied in a variety of otherforms; furthermore, various omissions, substitutions and changes in theform of the methods and systems described herein may be made withoutdeparting from the spirit of the disclosure. The accompanying claims andtheir equivalents are intended to cover such forms or modifications aswould fall within the scope and spirit of the disclosure.

What is claimed is:
 1. A radio-frequency (RF) module comprising: apackaging substrate configured to receive a plurality of components; apower amplifier (PA) assembly implemented on a PA die mounted on thepackaging substrate; an output matching network (OMN) device mounted onthe packaging substrate and configured to provide output matchingfunctionality for at least a portion of the PA assembly; and a bandselection switch device mounted on the OMN device.
 2. The RF module ofclaim 1 wherein the OMN device includes a plurality of OMN circuitsconfigured to provide output matching functionality for a respectiveplurality of frequency bands.
 3. The RF module of claim 1 wherein theOMN device is configured for 3G/4G operation and is implemented as anintegrated passive device (IPD) mounted on the packaging substrate in aflip-chip configuration.
 4. The RF module of claim 3 wherein the bandselection switch device is implemented on a silicon-on-insulator (SOI)die mounted on the OMN device.
 5. The RF module of claim 1 furthercomprising a tuning circuit mounted on the OMN device.
 6. The RF moduleof claim 5 wherein the tuning circuit is implemented as an integratedpassive device (IPD) mounted on the OMN device.
 7. The RF module ofclaim 1 wherein the band selection switch device and the packagingsubstrate are interconnected by one or more wirebonds.
 8. The RF moduleof claim 1 further comprising a controller configured to provide atleast some control of the PA assembly.
 9. The RF module of claim 8wherein the controller and the band selection switch device areinterconnected by one or more flying wirebonds.
 10. The RF module ofclaim 8 wherein the controller is implemented on a controller diemounted on the PA die.
 11. The RF module of claim 1 wherein the PA dieis a gallium arsenide (GaAs) die implementing a plurality ofheterojunction bipolar transistor (HBT) PAs.
 12. The RF module of claim11 wherein the HBT PAs include a plurality of PAs configured for 3G/4Goperation.
 13. The RF module of claim 12 wherein the HBT PAs furtherinclude a plurality of PAs configured for 2G operation.
 14. The RFmodule of claim 1 wherein the PA die and the OMN device are positionedadjacent to each other.
 15. The RF module of claim 14 wherein outputports of the PA die are aligned with corresponding input ports of theOMN device.
 16. The RF module of claim 14 further comprising: anadditional OMN device mounted on the packaging substrate adjacent to thePA die and configured to provide output matching functionality for atleast an additional portion of the PA assembly; and an additional bandselection switch device mounted on the additional OMN device.
 17. Amethod for fabricating a radio-frequency (RF) module, the methodcomprising: obtaining a packaging substrate configured to receive aplurality of components; mounting a power amplifier (PA) die on thepackaging substrate; mounting an output matching network (OMN) device onthe packaging substrate; interconnecting the PA die and the OMN device;and stacking a band selection switch on the OMN device.
 18. The methodof claim 17 wherein mounting the OMN device of the packaging substrateincludes forming one or more flip-chip connections.
 19. The method ofclaim 17 wherein interconnecting the PA die and the OMN die includeforming one or more flying wirebonds.
 20. A wireless device comprising:a transceiver configured to generate a radio-frequency (RF) signal; afront-end module (FEM) in communication with the transceiver, the FEMincluding a packaging substrate configured to receive a plurality ofcomponents, the FEM further including a power amplifier (PA) assemblyimplemented on a PA die mounted on the packaging substrate, the PAassembly configured to amplify the RF signal, the FEM further includingan output matching network (OMN) device mounted on the packagingsubstrate and configured to provide output matching functionality for atleast a portion of the PA assembly, the FEM further including a bandselection switch device mounted on the OMN device; and an antenna incommunication with the FEM and configured to transmit the amplified RFsignal.